new product vs-apu3006-f3, vs-apu3006-n3, VS-EPU3006-F3, vs-epu3006-n3 www.vishay.com vishay semiconductors revision: 05-apr-12 1 document number: 93570 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ultrafast rectifier, 30 a fred pt ? features ? low forward voltage drop ? ultrafast recovery time ? 175 c operating junction temperature ? designed and qualified according to jedec-jesd47 ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 description/applications ultralow v f , soft-switching ultrafast rectifiers optimized for discontinuous (critical) mode (dcm) power factor correction (pfc). the minimized conduction lo ss, optimized stored charge and low recovery current mi nimized the switching losses and reduce over dissipation in the switching element and snubbers. the device is also intended for use as a freewheeling diode in power supplies and other po wer switching applications. applications ac/dc smps 70 w to 400 w e.g. laptop and printer ac adaptors, desktop pc, tv and monitor, games units, and dvd ac/dc power supplies. product summary package to-247ac, to-247ac modified (2 pins) i f(av) 30 a v r 600 v v f at i f 2 v t rr typ. 30 ns t j max. 175 c diode variation single die to-247ac modi?ed to-247ac v s -apu 3 006-f 3 v s -epu 3 006-f 3 v s -apu 3 006-n 3 v s -epu 3 006-n 3 ba s e cathode 2 13 cathode anode anode 1 3 base cathode anode 4, 2 absolute maximum ratings parameter symbol test conditions max. units repetitive peak reverse voltage v rrm 600 v average rectified forward current i f(av) t c = 127 c 30 a non-repetitive peak surge current i fsm t c = 25 c 220 operating junction and storage temperatures t j , t stg - 65 to 175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units breakdown voltage, blocking voltage v br , v r i r = 100 a 600 - - v forward voltage v f i f = 30 a - 1.4 2 i f = 30 a, t j = 150 c - 1.15 1.35 reverse leakage current i r v r = v r rated - - 30 a t j = 150 c, v r = v r rated - - 250 junction capacitance c t v r = 600 v - 20 - pf series inductance l s measured lead to lead 5 mm from package body - 8.0 - nh
new product vs-apu3006-f3, vs-apu3006-n3, VS-EPU3006-F3, vs-epu3006-n3 www.vishay.com vishay semiconductors revision: 05-apr-12 2 document number: 93570 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition s min. typ. max. units reverse recovery time t rr i f = 1 a, di f /dt = 50 a/s, v r = 30 v - 30 45 ns t j = 25 c i f = 30 a di f /dt = 200 a/s v r = 200 v -45- t j = 125 c - 100 - peak recovery current i rrm t j = 25 c - 5.6 - a t j = 125 c - 10 - reverse recovery charge q rr t j = 25 c - 127 - nc t j = 125 c - 580 - thermal - mechanical specifications parameter symbol test condit ions min. typ. max. units maximum junction and storage temperature range t j , t stg - 65 - 175 c thermal resistance, junction to case r thjc -0.71.1c/w thermal resistance, junction to ambient per leg r thja typical socket mount - - 70 thermal resistance, case to heatsink r thcs mounting surface, flat, smooth and greased -0.5- weight -2.0- g -0.07- oz. mounting torque 1.2 (10) - 2.4 (20) kgf cm (lbf in) marking device case style to-247ac apu3006 case style to-247a c modified epu3006
new product vs-apu3006-f3, vs-apu3006-n3, VS-EPU3006-F3, vs-epu3006-n3 www.vishay.com vishay semiconductors revision: 05-apr-12 3 document number: 93570 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - typical forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junc tion capacitance vs. reverse voltage fig. 4 - max. thermal impedance z thjc characteristics forward voltage drop - v fm (v) in s tantaneou s forward current - i f (a) 0.0 0.5 1.0 1.5 2.0 2.5 1 10 100 1000 t j = 25 c t j = 150 c t j = 175 c 0 100 200 300 400 500 600 0.001 0.01 0.1 1 10 100 1000 150 c 175 c 25 c 50 c 75 c 125 c 100 c rever s e current - i r (a) rever s e voltage - v r (v) rever s e voltage - v r (v) junction capacitance - c t (pf) 0 100 200 300 400 500 600 1 10 100 1000 t1 , rectangular pul s e duration ( s ) thermal impedance z thjc (c/w) 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 0.01 0.1 1 10 s ingle pul s e (thermal re s i s tance) d = 0.02 d = 0.05 d = 0.1 d = 0.2 d = 0.5 d = 0.01
new product vs-apu3006-f3, vs-apu3006-n3, VS-EPU3006-F3, vs-epu3006-n3 www.vishay.com vishay semiconductors revision: 05-apr-12 4 document number: 93570 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt average forward current - i f(av) (a) 0 5 10 15 20 25 30 35 40 45 100 110 120 130 140 150 160 170 180 dc allowable ca s e temperature (c) average forward current - if (av) (v) average power lo ss (w) 0 5 10 15 20 25 30 35 40 45 0 10 20 30 40 50 60 d = 0.01 d = 0.02 d = 0.05 d = 0.1 d = 0.2 d = 0.5 dc rm s limit t rr (n s ) 100 1000 10 20 30 40 50 60 70 80 90 100 110 120 130 i f = 30 a, 125 c i f = 30 a, 25 c typical value di f /dt (a/ s ) q rr (nc) 100 1000 0 200 400 600 800 1000 1200 1400 1600 1800 i f = 30 a, 125 c i f = 30 a, 25 c typical value di f /dt (a/ s )
new product vs-apu3006-f3, vs-apu3006-n3, VS-EPU3006-F3, vs-epu3006-n3 www.vishay.com vishay semiconductors revision: 05-apr-12 5 document number: 93570 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
new product vs-apu3006-f3, vs-apu3006-n3, VS-EPU3006-F3, vs-epu3006-n3 www.vishay.com vishay semiconductors revision: 05-apr-12 6 document number: 93570 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per tube minimum order quantity packaging description vs-apu3006-f3 25 500 antistatic plastic tube vs-apu3006-n3 25 500 antistatic plastic tube VS-EPU3006-F3 25 500 antistatic plastic tube vs-epu3006-n3 25 500 antistatic plastic tube links to related documents dimensions to-247ac www.vishay.com/doc?95223 to-247ac modified www.vishay.com/doc?95253 part marking information to-247ac www.vishay.com/doc?95007 to-247ac modified www.vishay.com/doc?95442 2 - ultrafast mur series ? a = single diode ? e = single diode (modified) 1 - vishay semiconductors product 3 - p = to-247ac 4 - u = ultrafast recovery time 5 - current code (30 = 30 a) 6 - voltage code (06 = 600 v) 7 device code 5 1 3 2 4 6 vs- e p u 30 06 -f3 7 - environmental digit: -f3 = rohs compliant and totally lead (pb)-free -n3 = halogen-free, rohs compliant and totally lead (pb)-free
outline dimensions www.vishay.com vishay semiconductors revision: 16-jun-11 1 document number: 95223 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters and inches notes (1) dimensioning and tolera ncing per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish uncontrolled in l1 (6) ? p to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jede c outline to-247 with ex ception of dimension c symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.30 0.020 0.051 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.50 2.49 0.059 0.098 e1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 fk 2.54 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.37 0.065 0.094 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 n 7.62 bsc 0.3 b5 2.59 3.38 0.102 0.133 ? p 3.56 3.66 0.14 0.144 c 0.38 0.86 0.015 0.034 ? p1 - 6.98 - 0.275 c1 0.38 0.76 0.015 0.030 q 5.31 5.69 0.209 0.224 d 19.71 20.70 0.776 0.815 3 r 4.52 5.49 1.78 0.216 d1 13.08 - 0.515 - 4 s 5.51 bsc 0.217 bsc 0.10 a c m m e n (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c ? k b d m m a (6) ? p (datum b) fp1 d1 (4) 4 e1 0.01 b d m m view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) planting lead assignments diodes 1. - anode/open 2. - cathode 3. - anode
outline dimensions www.vishay.com vishay semiconductors revision: 21-jun-11 1 document number: 95253 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters and inches notes (1) dimensioning and tolera nce per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish uncontrolled in l1 (6) ? p to have a maximum draft an gle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jede c outline to-247 with ex ception of dimension c symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.30 0.020 0.051 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.50 2.49 0.059 0.098 e1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 ? k 2.54 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.37 0.065 0.094 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 n 7.62 bsc 0.3 b5 2.59 3.38 0.102 0.133 ? p 3.56 3.66 0.14 0.144 c 0.38 0.86 0.015 0.034 ? p1 - 6.98 - 0.275 c1 0.38 0.76 0.015 0.030 q 5.31 5.69 0.209 0.224 d 19.71 20.70 0.776 0.815 3 r 4.52 5.49 1.78 0.216 d1 13.08 - 0.515 - 4 s 5.51 bsc 0.217 bsc e n (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c a (6) p (datum b) p1 d1 (4) 4 e1 view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) planting lead assignments diodes 1. - anode/open 2. - cathode 3. - anode 0.10 a c m m ? k b d m m
part marking information www.vishay.com vishay semiconductors revision: 09-aug-11 1 document number: 95442 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-247ac modified e note (1) if part number contain h as last digit, product is aec-q101 qualified environmental naming code (z) product definition a termination lead (pb)-free btotally lead (pb)-free e rohs compliant and termination lead (pb)-free f rohs compliant and to tally lead (pb)-free m halogen-free, rohs compliant and termination lead (pb)-free n halogen-free, rohs compliant and totally lead (pb)-free ggreen assembly lot code product version (optional): z (replaced according below table) date code: year 1 = 2011 week 19 line x part number example: this is a xxxxxxx (1) with assembly lot code ac, assembled on ww 19, 2011 in the assembly line ?x? xxxxxxx (1) v z119x a c
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